"Investigation of BTI characteristics and its behavior on 10 nm SRAM with ..."

Minjung Jin et al. (2018)

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DOI: 10.1016/J.MICROREL.2017.12.014

access: closed

type: Journal Article

metadata version: 2020-02-22

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Minjung Jin, Kangjung Kim, Yoohwan Kim, Hyewon Shim, Jinju Kim, Gunrae Kim, Sangwoo Pae:
Investigation of BTI characteristics and its behavior on 10 nm SRAM with high-k/metal gate FinFET technology having multi-V_T gate stack. Microelectron. Reliab. 81: 201-209 (2018)

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