"A physical model on electron mobility in InGaAs nMOSFETs with stacked gate ..."

Y. Huang et al. (2015)

> Home

Details and statistics

DOI: 10.1016/J.MICROREL.2014.10.011

access: closed

type: Journal Article

metadata version: 2022-08-19

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/HuangXWZ15
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/HuangXWZ15
Y. Huang, Jing-Ping Xu, L. S. Wang, S. Y. Zhu:
A physical model on electron mobility in InGaAs nMOSFETs with stacked gate dielectric. Microelectron. Reliab. 55(2): 342-346 (2015)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.