"Transient device simulation of neutron-induced failure in IGBT: A first ..."

K. Guetarni et al. (2013)

> Home

Details and statistics

DOI: 10.1016/J.MICROREL.2013.07.108

access: closed

type: Journal Article

metadata version: 2022-10-02

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/GuetarniTBFPMVS13
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/GuetarniTBFPMVS13
K. Guetarni, Antoine D. Touboul, Jerome Boch, L. Foro, A. Privat, Alain Michez, J.-R. Vaillé, Frédéric Saigné:
Transient device simulation of neutron-induced failure in IGBT: A first step for developing a compact predictive model. Microelectron. Reliab. 53(9-11): 1293-1299 (2013)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.