"An improved reliability model for Si and GaN power FET."

Gady Golan et al. (2018)

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DOI: 10.1016/J.MICROREL.2017.12.020

access: closed

type: Journal Article

metadata version: 2023-09-30

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Gady Golan, Moshe Azoulay, Tsuriel Avraham, Ilan Kremenetsky, Joseph B. Bernstein:
An improved reliability model for Si and GaN power FET. Microelectron. Reliab. 81: 77-89 (2018)

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