"Statistical simulation of gate dielectric wearout, leakage, and breakdown."

Andreas Gehring, Siegfried Selberherr (2004)

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DOI: 10.1016/J.MICROREL.2004.07.101

access: closed

type: Journal Article

metadata version: 2020-02-22

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Andreas Gehring, Siegfried Selberherr:
Statistical simulation of gate dielectric wearout, leakage, and breakdown. Microelectron. Reliab. 44(9-11): 1879-1884 (2004)

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