"Evolution of C-V and I-V characteristics for a commercial 600 V GaN ..."

Jian-Zhi Fu et al. (2018)

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DOI: 10.1016/J.MICROREL.2018.06.034

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type: Journal Article

metadata version: 2025-01-19

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Jian-Zhi Fu, François Fouquet, Moncef Kadi, Pascal Dherbécourt:
Evolution of C-V and I-V characteristics for a commercial 600 V GaN GIT power device under repetitive short-circuit tests. Microelectron. Reliab. 88-90: 652-655 (2018)

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