"Influence of nitradation in ultra-thin oxide on the gate current ..."

M. Fadlallah et al. (2003)

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DOI: 10.1016/S0026-2714(03)00255-5

access: closed

type: Journal Article

metadata version: 2020-02-22

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M. Fadlallah, C. Petit, A. Meinertzhagen, Gérard Ghibaudo, M. Bidaud, O. Simonetti, F. Guyader:
Influence of nitradation in ultra-thin oxide on the gate current degradation of N and PMOS devices. Microelectron. Reliab. 43(9-11): 1433-1438 (2003)

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