"Temperature, humidity, and bias acceleration model for a GaAs pHEMT process."

Gergana I. Drandova (2015)

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DOI: 10.1016/J.MICROREL.2015.09.027

access: closed

type: Journal Article

metadata version: 2020-02-22

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Gergana I. Drandova:
Temperature, humidity, and bias acceleration model for a GaAs pHEMT process. Microelectron. Reliab. 55(12): 2511-2515 (2015)

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