"AlGaN/GaN High Electron Mobility Transistor degradation under on- and ..."

E. A. Douglas et al. (2011)

> Home

Details and statistics

DOI: 10.1016/J.MICROREL.2010.09.024

access: closed

type: Journal Article

metadata version: 2024-10-06

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/DouglasCCGLLHWJVKJRP11
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/DouglasCCGLLHWJVKJRP11
E. A. Douglas, C. Y. Chang, David J. Cheney, B. P. Gila, Chi-Fai Lo, Liu Lu, M. R. Holzworth, Patrick G. Whiting, Kevin S. Jones, Glen David Via, Jinhyung Kim, Soohwan Jang, Fan Ren, Stephen J. Pearton:
AlGaN/GaN High Electron Mobility Transistor degradation under on- and off-state stress. Microelectron. Reliab. 51(2): 207-211 (2011)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.