"Impact of inside spacer process on fully self-aligned 250 GHz SiGe: C HBTs ..."

Malick Diop et al. (2008)

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DOI: 10.1016/J.MICROREL.2008.06.045

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type: Journal Article

metadata version: 2020-02-22

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Malick Diop, Nathalie Revil, M. Marin, Frederic Monsieur, Pascal Chevalier, Gérard Ghibaudo:
Impact of inside spacer process on fully self-aligned 250 GHz SiGe: C HBTs reliability performances: a-Si vs. nitride. Microelectron. Reliab. 48(8-9): 1198-1201 (2008)

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