"Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and ..."

Maximilian Dammann et al. (2018)

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DOI: 10.1016/J.MICROREL.2018.06.042

access: closed

type: Journal Article

metadata version: 2021-10-14

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Maximilian Dammann, Martina Baeumler, Peter Brückner, Tobias Kemmer, Helmer Konstanzer, Andreas Graff, Michél Simon-Najasek, Rüdiger Quay:
Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology. Microelectron. Reliab. 88-90: 385-388 (2018)

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