"Device characteristics of AlGaN/GaN MIS-HEMTs with high-k ..."

Hsien-Chin Chiu et al. (2014)

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DOI: 10.1016/J.MICROREL.2014.03.006

access: closed

type: Journal Article

metadata version: 2020-02-22

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Hsien-Chin Chiu, Chia-Hsuan Wu, Ji-Fan Chi, Feng-Tso Chien:
Device characteristics of AlGaN/GaN MIS-HEMTs with high-k Hf_xZr₁_-_xO₂ (x = 0.66, 0.47, 0.15) insulator layer. Microelectron. Reliab. 54(6-7): 1282-1287 (2014)

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