"The device characteristics of Ir- and Ti-based Schottky gates AlSb/InAs ..."

Hsien-Chin Chiu et al. (2015)

> Home

Details and statistics

DOI: 10.1016/J.MICROREL.2015.03.016

access: closed

type: Journal Article

metadata version: 2024-10-06

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/ChiuLHCHC15
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/ChiuLHCHC15
Hsien-Chin Chiu, Wen-Yu Lin, W. J. Hsueh, Pei-Chin Chiu, Yue-Ming Hsin, Jen-Inn Chyi:
The device characteristics of Ir- and Ti-based Schottky gates AlSb/InAs high electron mobility transistors. Microelectron. Reliab. 55(6): 890-893 (2015)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.