![](https://dblp.uni-trier.de./img/logo.ua.320x120.png)
![](https://dblp.uni-trier.de./img/dropdown.dark.16x16.png)
![](https://dblp.uni-trier.de./img/peace.dark.16x16.png)
Остановите войну!
for scientists:
![search dblp search dblp](https://dblp.uni-trier.de./img/search.dark.16x16.png)
![search dblp](https://dblp.uni-trier.de./img/search.dark.16x16.png)
default search action
"Gate leakage current suppression and reliability improvement for ultra-low ..."
Wei-Fong Chi et al. (2015)
- Wei-Fong Chi, Kuei-Shu Chang-Liao, Shih-Han Yi, Chen-Chien Li, Yan-Lin Li:
Gate leakage current suppression and reliability improvement for ultra-low EOT Ge MOS devices by suitable HfAlO/HfON thickness and sintering temperature. Microelectron. Reliab. 55(11): 2183-2187 (2015)
![](https://dblp.uni-trier.de./img/cog.dark.24x24.png)
manage site settings
To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.