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"Examination and evaluation of La2O3 as gate ..."
Vanessa Capodieci et al. (2005)
- Vanessa Capodieci, Florian Wiest, Torsten Sulima, Jörg Schulze, Ignaz Eisele:
Examination and evaluation of La2O3 as gate dielectric for sub-100nm CMOS and DRAM technology. Microelectron. Reliab. 45(5-6): 937-940 (2005)
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