"Strong electron irradiation hardness of 852 nm Al-free laser diodes."

Mathieu Boutillier et al. (2006)

> Home

Details and statistics

DOI: 10.1016/J.MICROREL.2006.07.049

access: closed

type: Journal Article

metadata version: 2021-05-06

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/BoutillierGBLVKG06
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/BoutillierGBLVKG06
Mathieu Boutillier, Olivier Gauthier-Lafaye, S. Bonnefont, F. Lozes-Dupuy, F.-J. Vermersch, M. Krakowski, Olivier Gilard:
Strong electron irradiation hardness of 852 nm Al-free laser diodes. Microelectron. Reliab. 46(9-11): 1715-1719 (2006)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.