"Influence of gate length on ESD-performance for deep submicron CMOS ..."

Karlheinz Bock et al. (2001)

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DOI: 10.1016/S0026-2714(00)00243-2

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type: Journal Article

metadata version: 2024-10-06

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Karlheinz Bock, Bart Keppens, Vincent De Heyn, Guido Groeseneken, L. Y. Ching, A. Naem:
Influence of gate length on ESD-performance for deep submicron CMOS technology. Microelectron. Reliab. 41(3): 375-383 (2001)

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