default search action
"Gate charge behaviors in N-channel power VDMOSFETs during HEF and PBT ..."
M. Alwan et al. (2007)
- M. Alwan, B. Beydoun, K. Ketata, M. Zoaeter:
Gate charge behaviors in N-channel power VDMOSFETs during HEF and PBT stresses. Microelectron. Reliab. 47(9-11): 1406-1410 (2007)
manage site settings
To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.