"Analysis of 6 T SRAM cell in sub-45 nm CMOS and FinFET ..."

Roberto B. Almeida et al. (2018)

> Home

Details and statistics

DOI: 10.1016/J.MICROREL.2018.07.134

access: closed

type: Journal Article

metadata version: 2025-01-19

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/AlmeidaMBSRM18
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/AlmeidaMBSRM18
Roberto B. Almeida, Cleiton Magano Marques, Paulo F. Butzen, Fábio G. R. G. da Silva, Ricardo A. L. Reis, Cristina Meinhardt:
Analysis of 6 T SRAM cell in sub-45 nm CMOS and FinFET technologies. Microelectron. Reliab. 88-90: 196-202 (2018)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.