"Effects of electromagnetic near-field stress on SiGe HBT's reliability."

A. Alaeddine et al. (2009)

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DOI: 10.1016/J.MICROREL.2009.07.014

access: closed

type: Journal Article

metadata version: 2020-02-22

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A. Alaeddine, M. Kadi, K. Daoud, B. Mazari:
Effects of electromagnetic near-field stress on SiGe HBT's reliability. Microelectron. Reliab. 49(9-11): 1029-1032 (2009)

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