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"Threshold voltage peculiarities and bias temperature instabilities of SiC ..."
Thomas Aichinger, Gerald Rescher, Gregor Pobegen (2018)
- Thomas Aichinger, Gerald Rescher, Gregor Pobegen:
Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs. Microelectron. Reliab. 80: 68-78 (2018)
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