"The abnormality in gate oxide failure induced by stress-enhanced diffusion ..."

Yongseok Ahn et al. (2002)

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DOI: 10.1016/S0026-2714(01)00250-5

access: closed

type: Journal Article

metadata version: 2020-02-22

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Yongseok Ahn, Sanghyun Lee, Gwanhyeob Koh, Taeyoung Chung, Kinam Kim:
The abnormality in gate oxide failure induced by stress-enhanced diffusion of polycrystalline silicon. Microelectron. Reliab. 42(3): 349-354 (2002)

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