"Conductive filament evolution in HfO2 resistive RAM device ..."

Paolo Lorenzi, Rosario Rao, Fernanda Irrera (2015)

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DOI: 10.1016/J.MICROREL.2015.06.083

access: closed

type: Journal Article

metadata version: 2020-02-22

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Paolo Lorenzi, Rosario Rao, Fernanda Irrera:
Conductive filament evolution in HfO₂ resistive RAM device during constant voltage stress. Microelectron. Reliab. 55(9-10): 1446-1449 (2015)

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