"Emitter ballasting resistor design of InGaP/GaAs power HBT for high ..."

Xiaodong Zhang et al. (2018)

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DOI: 10.1016/J.MEJO.2018.04.010

access: closed

type: Journal Article

metadata version: 2020-02-22

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Xiaodong Zhang, Xiaohong Sun, Feng Wang, Ting Tian, Huai Gao:
Emitter ballasting resistor design of InGaP/GaAs power HBT for high linearity based on Volterra Series distortion analysis. Microelectron. J. 76: 28-32 (2018)

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