"Electrical characterization and TCAD simulations of multi-gate bulk nMOSFET."

Inga Zbierska et al. (2015)

> Home

Details and statistics

DOI: 10.1016/J.MEJO.2015.03.018

access: closed

type: Journal Article

metadata version: 2024-05-07

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mj/ZbierskaMCFL15
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mj/ZbierskaMCFL15
Inga Zbierska, Liviu Militaru, Françis Calmon, Sylvain Feruglio, Guo-Neng Lu:
Electrical characterization and TCAD simulations of multi-gate bulk nMOSFET. Microelectron. J. 46(7): 588-592 (2015)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.