"Real-time channel temperature monitoring of p-GaN HEMTs based on gate ..."

Luqiao Yin et al. (2024)

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DOI: 10.1016/J.MEJO.2024.106121

access: closed

type: Journal Article

metadata version: 2024-05-31

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Luqiao Yin, Shuang Wu, Kailin Ren, Wenkui Zhang, Jianhua Zhang:
Real-time channel temperature monitoring of p-GaN HEMTs based on gate leakage current. Microelectron. J. 145: 106121 (2024)

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