"Modeling and simulation of an insulated-gate HEMT using p-SnO2 ..."

Bo Yi et al. (2023)

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DOI: 10.1016/J.MEJO.2023.105895

access: closed

type: Journal Article

metadata version: 2023-09-24

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Bo Yi, Yi Xu, LiTian Zheng, Junji Cheng, Haimeng Huang, MouFu Kong, Hongqiang Yang:
Modeling and simulation of an insulated-gate HEMT using p-SnO₂ gate for high V_TH design. Microelectron. J. 139: 105895 (2023)

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