"Impacts of quantum confinement effect on threshold voltage and ..."

Lijun Xu et al. (2024)

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DOI: 10.1016/J.MEJO.2024.106392

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type: Journal Article

metadata version: 2024-09-20

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Lijun Xu, Linfang An, Jia Zhao, Yulei He, Lijuan Teng, Yuanxing Jiang:
Impacts of quantum confinement effect on threshold voltage and drain-induced barrier lowering effect of junctionless surrounding-gate nanosheet NMOSFET including source/drain depletion regions. Microelectron. J. 152: 106392 (2024)

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