"Modeling of TID-induced leakage current in ultra-deep submicron SOI NMOSFETs."

Shanxue Xi et al. (2020)

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DOI: 10.1016/J.MEJO.2020.104829

access: closed

type: Journal Article

metadata version: 2023-09-30

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Shanxue Xi, Qiwen Zheng, Wu Lu, Jiangwei Cui, Ying Wei, Qi Guo:
Modeling of TID-induced leakage current in ultra-deep submicron SOI NMOSFETs. Microelectron. J. 102: 104829 (2020)

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