"A novel 4H-SiC IGBT with double gate PMOS for improving the switch ..."

Lijuan Wu et al. (2024)

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DOI: 10.1016/J.MEJO.2024.106187

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type: Journal Article

metadata version: 2024-05-31

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Lijuan Wu, Deqiang Yang, Guanglin Yang, Dongsheng Zhao, Jie Yuan, Zigui Tu, Mengjiao Liu:
A novel 4H-SiC IGBT with double gate PMOS for improving the switch controllability and FBSOA. Microelectron. J. 147: 106187 (2024)

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