"Capacitance characterization of tapered through-silicon-via considering ..."

Fengjuan Wang et al. (2014)

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DOI: 10.1016/J.MEJO.2013.10.015

access: closed

type: Journal Article

metadata version: 2020-02-22

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Fengjuan Wang, Zhangming Zhu, Yintang Yang, Xiaoxian Liu, Ruixue Ding:
Capacitance characterization of tapered through-silicon-via considering MOS effect. Microelectron. J. 45(2): 205-210 (2014)

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