"A 0.4 V 12T 2RW dual-port SRAM with suppressed common-row-access disturbance."

Bo Wang, Jun Zhou, Tony Tae-Hyoung Kim (2017)

> Home

Details and statistics

DOI: 10.1016/J.MEJO.2017.01.003

access: closed

type: Journal Article

metadata version: 2022-04-09

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mj/WangZK17
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mj/WangZK17
Bo Wang, Jun Zhou, Tony Tae-Hyoung Kim:
A 0.4 V 12T 2RW dual-port SRAM with suppressed common-row-access disturbance. Microelectron. J. 69: 78-85 (2017)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.