"Nonalloyed ohmic contact development with n+ InGaN regrowth method and ..."

Ahmet Toprak, Ekmel Özbay (2023)

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DOI: 10.1016/J.MEJO.2023.105762

access: closed

type: Journal Article

metadata version: 2023-06-15

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Ahmet Toprak, Ekmel Özbay:
Nonalloyed ohmic contact development with n+ InGaN regrowth method and analysis of its effect on AlGaN/GaN HEMT devices. Microelectron. J. 135: 105762 (2023)

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