"Analysis of I-V-T characteristics of Be-doped AlGaAs Schottky diodes grown ..."

Slimane Oussalah et al. (2022)

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DOI: 10.1016/J.MEJO.2022.105409

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type: Journal Article

metadata version: 2024-10-06

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Slimane Oussalah, Walid Filali, Elyes Garoudja, Boumediene Zatout, Fouaz Lekoui, Rachid Amrani, Noureddine Sengouga, Mohamed Henini:
Analysis of I-V-T characteristics of Be-doped AlGaAs Schottky diodes grown on (100) GaAs substrates by molecular beam epitaxy. Microelectron. J. 122: 105409 (2022)

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