"Comprehensive study on the TID effects of 0.13 μm partially depleted ..."

Bingxu Ning et al. (2013)

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DOI: 10.1016/J.MEJO.2012.09.004

access: closed

type: Journal Article

metadata version: 2020-02-22

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  - https://dblp.org/rec/journals/mj/NingBHZCZ13
Bingxu Ning, Dawei Bi, Huixiang Huang, Zhengxuan Zhang, Ming Chen, Shichang Zou:
Comprehensive study on the TID effects of 0.13 μm partially depleted SOI NMOSFETs. Microelectron. J. 44(2): 86-93 (2013)

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