"Influence of AlN buffer layer thickness on the properties of GaN epilayer ..."

Weijun Luo et al. (2008)

> Home

Details and statistics

DOI: 10.1016/J.MEJO.2008.01.042

access: closed

type: Journal Article

metadata version: 2020-02-22

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mj/LuoWGXWRLL08
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mj/LuoWGXWRLL08
Weijun Luo, Xiaoliang Wang, Lunchun Guo, Hongling Xiao, Cuimei Wang, Junxue Ran, Jianping Li, Jinmin Li:
Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(1 1 1) by MOCVD. Microelectron. J. 39(12): 1710-1713 (2008)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.