"Hybrid MOSFET-TFET 11T SRAM cell with high write speed and free ..."

Wenjuan Lu et al. (2025)

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DOI: 10.1016/J.MEJO.2024.106498

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type: Journal Article

metadata version: 2025-01-13

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Wenjuan Lu, Chuang Wang, Wei Hu, Chenghu Dai, Chunyu Peng, Zhiting Lin, Xiulong Wu:
Hybrid MOSFET-TFET 11T SRAM cell with high write speed and free half-selected disturbance. Microelectron. J. 156: 106498 (2025)

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