"A 20 nm robust single-ended boost-less 7T FinFET sub-threshold SRAM cell ..."

C. B. Kushwah, Santosh Kumar Vishvakarma, Devesh Dwivedi (2016)

> Home

Details and statistics

DOI: 10.1016/J.MEJO.2016.02.010

access: closed

type: Journal Article

metadata version: 2020-02-22

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mj/KushwahVD16
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mj/KushwahVD16
C. B. Kushwah, Santosh Kumar Vishvakarma, Devesh Dwivedi:
A 20 nm robust single-ended boost-less 7T FinFET sub-threshold SRAM cell under process-voltage-temperature variations. Microelectron. J. 51: 75-88 (2016)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.