"Simulation of boron diffusion in Si and strained SiGe layers."

R. Kinder et al. (2007)

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DOI: 10.1016/J.MEJO.2007.03.002

access: closed

type: Journal Article

metadata version: 2020-02-22

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R. Kinder, F. Schwierz, P. Beno, J. Geßner:
Simulation of boron diffusion in Si and strained SiGe layers. Microelectron. J. 38(4-5): 576-582 (2007)

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