"The influence of high-k passivation layer on breakdown voltage of Schottky ..."

Binola K. Jebalin et al. (2015)

> Home

Details and statistics

DOI: 10.1016/J.MEJO.2015.04.006

access: closed

type: Journal Article

metadata version: 2020-10-26

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mj/JebalinRPMN15
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mj/JebalinRPMN15
Binola K. Jebalin, A. Shobha Rekh, P. Prajoon, N. Mohankumar, D. Nirmal:
The influence of high-k passivation layer on breakdown voltage of Schottky AlGaN/GaN HEMTs. Microelectron. J. 46(12): 1387-1391 (2015)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.