"Half-select disturb-free single-ended 9-transistor SRAM cell with ..."

Farzaneh Izadinasab, Morteza Gholipour (2021)

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DOI: 10.1016/J.MEJO.2021.105100

access: closed

type: Journal Article

metadata version: 2021-07-29

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Farzaneh Izadinasab, Morteza Gholipour:
Half-select disturb-free single-ended 9-transistor SRAM cell with bit-interleaving scheme in TMDFET technology. Microelectron. J. 113: 105100 (2021)

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