"Novel superjunction Fin-based NiO/β-Ga2O3 HJFET with additional ..."

Jiaweiwen Huang et al. (2024)

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DOI: 10.1016/J.MEJO.2024.106325

access: closed

type: Journal Article

metadata version: 2024-08-22

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Jiaweiwen Huang, Wensuo Chen, Shenglei Zhao, Qisheng Yu, Aohang Zhang, Kunfeng Zhu, Jian Li:
Novel superjunction Fin-based NiO/β-Ga2O3 HJFET with additional surface drift region channels for record-high performance. Microelectron. J. 151: 106325 (2024)

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