"Quantum-mechanical effects and gate leakage current of nanoscale n-type ..."

Weida Hu et al. (2006)

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DOI: 10.1016/J.MEJO.2005.09.002

access: closed

type: Journal Article

metadata version: 2020-02-22

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Weida Hu, Xiaoshuang Chen, Xuchang Zhou, Zhijue Quan, Wei Lu:
Quantum-mechanical effects and gate leakage current of nanoscale n-type FinFETs: A 2d simulation study. Microelectron. J. 37(7): 613-619 (2006)

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