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"Extraction of the active acceptor concentration in (pseudo-) vertical GaN ..."

Raoul Hentschel et al. (2019)

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DOI: 10.1016/J.MEJO.2019.07.011

access: closed

type: Journal Article

metadata version: 2023-09-30

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Raoul Hentschel, Andre Wachowiak, A. Großer, Simon Kotzea, A. Debald, Holger Kalisch, Andrei Vescan, A. Jahn, Stefan Schmult, Thomas Mikolajick:
Extraction of the active acceptor concentration in (pseudo-) vertical GaN MOSFETs using the body-bias effect. Microelectron. J. 91: 42-45 (2019)

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