"Avalanche photodiode with sectional InGaAsP/InP charge layer."

Daniel Hasko et al. (2006)

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DOI: 10.1016/J.MEJO.2005.09.008

access: closed

type: Journal Article

metadata version: 2020-11-05

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Daniel Hasko, Jaroslav Kovác, F. Uherek, Jaroslava Skriniarová, J. Jakabovic, L. Peternai:
Avalanche photodiode with sectional InGaAsP/InP charge layer. Microelectron. J. 37(6): 483-486 (2006)

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