"The influence of 1 nm AlN interlayer on properties of the ..."

Lunchun Guo et al. (2008)

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DOI: 10.1016/J.MEJO.2007.12.005

access: closed

type: Journal Article

metadata version: 2020-02-22

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Lunchun Guo, Xiaoliang Wang, Cuimei Wang, Hongling Xiao, Junxue Ran, Weijun Luo, Xiaoyan Wang, Baozhu Wang, Cebao Fang, Guoxin Hu:
The influence of 1 nm AlN interlayer on properties of the Al_0.3Ga_0.7N/AlN/GaN HEMT structure. Microelectron. J. 39(5): 777-781 (2008)

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