"Current collapse degradation in GaN High Electron Mobility Transistor by ..."

D. Godfrey et al. (2021)

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DOI: 10.1016/J.MEJO.2021.105293

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type: Journal Article

metadata version: 2021-12-10

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D. Godfrey, D. Nirmal, L. Arivazhagan, D. Godwinraj, N. Mohan Kumar, Yulin Chen, Wenkuan Yeh:
Current collapse degradation in GaN High Electron Mobility Transistor by virtual gate. Microelectron. J. 118: 105293 (2021)

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