"Record gain at 3.1 GHz of 4H-SiC high power RF MESFET."

Hossein Elahipanah (2011)

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DOI: 10.1016/J.MEJO.2010.10.009

access: closed

type: Journal Article

metadata version: 2020-02-22

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Hossein Elahipanah:
Record gain at 3.1 GHz of 4H-SiC high power RF MESFET. Microelectron. J. 42(2): 299-304 (2011)

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