"Corrigendum to "Modelling of through silicon via and devices ..."

Mohamed Abouelatta-Ebrahim et al. (2015)

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DOI: 10.1016/J.MEJO.2015.09.012

access: closed

type: Journal Article

metadata version: 2023-06-12

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Mohamed Abouelatta-Ebrahim, Rabah Dahmani, Olivier Valorge, Françis Calmon, Christian Gontrand:
Corrigendum to "Modelling of through silicon via and devices electromagnetic coupling" [Microelectron. J 42 (2011) 316-324]. Microelectron. J. 46(11): 1103 (2015)

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