"Ultra-low-power and stable 10-nm FinFET 10T sub-threshold SRAM."

Erfan Abbasian, Shilpi Birla, Morteza Gholipour (2022)

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DOI: 10.1016/J.MEJO.2022.105427

access: closed

type: Journal Article

metadata version: 2022-05-18

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Erfan Abbasian, Shilpi Birla, Morteza Gholipour:
Ultra-low-power and stable 10-nm FinFET 10T sub-threshold SRAM. Microelectron. J. 123: 105427 (2022)

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